Formation of a Buffer Layer for Graphene on C-Face SiC{0001}
نویسندگان
چکیده
منابع مشابه
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Hall bars were fabricated on epitaxial graphene formed on 4H-SiC{0001} under various growth environments. Subsequently, they were analyzed via electrical characterization, atomic force microscopy (AFM), Raman mapping, and transmission electron microscopy (TEM) with emphasis on the C-face. The results of the measurement techniques were then corroborated to find correlations. It was found that th...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2013
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-013-2901-8